silicon germanium ghz

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Authors R W Koch · K Lande · Richard Mitchell · P W Wildenhain · Nguyen Si Hoang · John LAbout Differential GPS · Image stabilization · Communications satellite · Computer data stor

Silicon-germanium chip sets new speed record- ScienceDaily

A research team has demonstrated the world's fastest silicon-based device to date. The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the

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A 5-6 Ghz Silicon-Germanium Vco With Tunable Polyphase

This thesis presents the design and characterization of a monolithic 5-6 GHz Silicon Germanium (SiGe) inductor-capacitor (LC) tank voltage controlled oscillator (VCO) with tunable polyphase outputs. Circuits were designed and fabricated using the Motorola 0.4 ìm CDR1 SiGe BiCMOS process, which has four interconnect metal layers and a thick

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Georgia Tech/IBM team demonstrates first 500 GHz silicon

The silicon-germanium heterojunction bipolar transistors built by the IBM-Georgia Tech team operated at frequencies above 500 GHz at 4.5 Kelvins a temperature attained using liquid helium cooling.

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Low Power Silicon Germanium Electronics for

apertures (e.g., >20 m at 1.4 GHz) and highly integrated stable RF electronics on orbit. Radio-interferometric techniques such as Synthetic Thinned Array Radiometry (STAR), using silicon germanium (SiGe) low power radio frequency integrated circuits (RFIC), is the one of the most promising technologies to enable very large non-

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Integrated GHz silicon photonic interconnect with

germanium-on-silicon photodetector, as illustrated with SEM images of (a) the full optical link, (b) the ring resonator. modulator after silicidation, and (c) the lateral metal-germanium-metal photodetector after electrode hole etch. The entire chip is fabricated using wafer bonding and standard monolithic processes.

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ULTRA-WIDE TUNABLE CIRCUIT DESIGN USING SILICON

GHz, the ring oscillator occupies 1.0 x 0.63 mm2 (without contact pads). The oscillator frequency tuning is achieved by varying a bias current between 1-9 mA and it consumes 36 mW of DC power at 17 GHz and 185 mW at 8 GHz. The second circuit is a ring oscillator with frequency and amplitude tuning knobs that covers the end bands (9-11

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() 42 GHz p.i.n Germanium photodetector integrated in

A novel waveguide-coupled silicongermanium APD detector with three electric terminals was demonstrated with breakdown voltage of −6 V, bandwidth of

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Millimeter-Wave Receiver Concepts for 77 GHz Automotive

Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology (SpringerBriefs in Electrical and Computer Engineering) Kindle edition by Dietmar Kissinger. Download it once and read it on your Kindle device, PC, phones or tablets. Use features like bookmarks, note taking and highlighting while reading Millimeter-Wave Receiver Concepts for 77 GHz Automotive

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Silicon Germanium Broadband MMIC Amplifier

Silicon Germanium Broadband MMIC Amplifier BGA614 VPS05605 4 2 1 3 GND, 2,4 IN, 1 Out, 3 Features Cascadable 50 Ω-gain block 3 dB-bandwidth DC to 2.4 GHz with 18.5 dB typical gain at 1.0 GHz Compression point P-1dB = 12 dBm at 2.0 GHz Noise figure F 50Ω = 2.30 dB at 2.0 GHz Absolute stable G f70zH T Silicon Germanium technology Applications

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Microwaves101 Silicon Semiconductors

Silicon germanium HBT SiGe is a new development (in the last eight years), and was originally predicted to put all forms of GaAs into the history books. SiGe can make very cheap parts, with performance maybe into millimeterwave, with production processing on eight-inch (200 mm) diameters wafers.

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Silicon-Germanium Chip Sets New Speed Record School

The investigators operated a silicon-germanium (SiGe) transistor at 798 gigahertz (GHz) fMAX, exceeding the previous speed record for silicon-germanium chips by about 200 GHz.

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Monolithic germanium/silicon avalanche photodiodes with

A monolithically grown Ge/Si avalanche photodetectors (APD) with a gainbandwidth product of 340 GHz, the highest value for any APDs operating at 1,300 nm, and a sensitivity equivalent to

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() Germanium on Silicon Avalanche Photodiode

Silicon photonics is one of the promising technologies for high speed optical fiber communications [1]. Among various silicon photonic devices, germanium on silicon avalanche photodiodes (Ge

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Silicon-Germanium Chip Sets New Speed Record

But silicon-germanium changes this situation. In SiGe technology, small amounts of germanium are introduced into silicon wafers at the atomic scale during the standard manufacturing process, boosting performance substantially. The result is cutting-edge silicon-germanium devices such as the IHP Microelectronics 800 GHz transistor.

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IBM and Georgia Tech Break Silicon Speed Record

Jun 20, 2006 · IBM Press Room IBM and the Georgia Institute of Technology announced today that their researchers have demonstrated the first silicon-based chip capable of operating at frequencies above 500 GHz- 500 billion cycles per second- by cryogenically "freezing" the chip to 451 degrees below zero Fahrenheit (4.5 Kelvins).

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Silicon Germanium Broadband MMIC Amplifier

Silicon Germanium Broadband MMIC Amplifier BGA614 VPS05605 4 2 1 3 GND, 2,4 IN, 1 Out, 3 Features Cascadable 50 Ω-gain block 3 dB-bandwidth DC to 2.4 GHz with 18.5 dB typical gain at 1.0 GHz Compression point P-1dB = 12 dBm at 2.0 GHz Noise figure F 50Ω = 2.30 dB at 2.0 GHz Absolute stable G f70zH T Silicon Germanium

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New silicon germanium technology blooms at IBM

New silicon germanium technology blooms at IBM 5 August 2005 New technology for silicon germanium processors promises to reduce the cost of mobile consumer

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Georgia Tech/IBM team demonstrates first 500 GHz silicon

The silicon-germanium heterojunction bipolar transistors built by the IBM-Georgia Tech team operated at frequencies above 500 GHz at 4.5 Kelvins a temperature attained using liquid helium cooling.

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Infineon BGT24 family EBV Elektronik

The BGT24LTR11 is a Silicon Germanium radar MMIC for signal generation and reception, operating in the 24.0 GHz to 24.25 GHz ISM band. It is based on a 24

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New silicon germanium technology blooms at IBM

Aug 05, 2005 · New technology for silicon germanium processors promises to reduce the cost of mobile consumer products, advance high-bandwidth wireless communications, and push such innovations as

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